The influence of defects on the cellular open circuit voltage in CuInGaSe2 thin film solar modules-An illuminated lock-in thermography study
Identifieur interne : 000015 ( Main/Repository ); précédent : 000014; suivant : 000016The influence of defects on the cellular open circuit voltage in CuInGaSe2 thin film solar modules-An illuminated lock-in thermography study
Auteurs : RBID : Pascal:14-0084000Descripteurs français
- Pascal (Inist)
- Circuit cellulaire, Tension circuit ouvert, Panneau solaire, Thermographie, Imagerie thermique, Rendement élevé, Interconnexion, Sensibilité, Hétérogénéité, Procédé fabrication, Caractéristique électrique, Cellule couche mince, Cellule solaire, Masquage, Circuit ouvert, Séléniure d'indium, Séléniure de cuivre, Séléniure de gallium, Couche mince, CuInGaSe2.
English descriptors
- KwdEn :
- Cellular circuit, Copper selenides, Electrical characteristic, Gallium selenides, Heterogeneity, High efficiency, Indium selenides, Interconnection, Manufacturing process, Masking, Open circuit, Open circuit voltage, Photovoltaic array, Sensitivity, Solar cell, Thermal imaging, Thermography, Thin film, Thin film cell.
Abstract
CuInGaSe2 (CIGS) thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. This occurs due to film's sensitivity to inhomogeneities during the manufacturing process. The result is a decrease of electrical power output from a cell or module. In this paper, we present the influence of macroscopic defects on the electrical behavior of CIGS thin film solar cells. To accomplish this, we investigated the relation between the IR-signal emitted of a defect in a cell (measured using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (Voc,cell) under low light conditions ( < 100 W/m2). Furthermore, we developed a modified masking method of measuring Voc,cell of a single cell within a thin film solar module.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The influence of defects on the cellular open circuit voltage in CuInGaSe<sub>2</sub> thin film solar modules-An illuminated lock-in thermography study</title><author><name sortKey="Adams, J" uniqKey="Adams J">J. Adams</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstrasse 2a</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>91058 Erlangen</wicri:noRegion><wicri:noRegion>Haberstrasse 2a</wicri:noRegion><wicri:noRegion>91058 Erlangen</wicri:noRegion></affiliation></author><author><name sortKey="Vetter, A" uniqKey="Vetter A">A. Vetter</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstrasse 2a</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>91058 Erlangen</wicri:noRegion><wicri:noRegion>Haberstrasse 2a</wicri:noRegion><wicri:noRegion>91058 Erlangen</wicri:noRegion></affiliation></author><author><name sortKey="Hoga, F" uniqKey="Hoga F">F. Hoga</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstrasse 2a</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>91058 Erlangen</wicri:noRegion><wicri:noRegion>Haberstrasse 2a</wicri:noRegion><wicri:noRegion>91058 Erlangen</wicri:noRegion></affiliation></author><author><name sortKey="Fecher, F" uniqKey="Fecher F">F. Fecher</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstrasse 2a</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>91058 Erlangen</wicri:noRegion><wicri:noRegion>Haberstrasse 2a</wicri:noRegion><wicri:noRegion>91058 Erlangen</wicri:noRegion></affiliation></author><author><name sortKey="Theisen, J P" uniqKey="Theisen J">J. P. Theisen</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Manz CIGS Technology GmbH, Alfred-Leikam-Str. 25</s1><s2>74523 Schwäbisch Hall</s2><s3>DEU</s3><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>74523 Schwäbisch Hall</wicri:noRegion><wicri:noRegion>Alfred-Leikam-Str. 25</wicri:noRegion><wicri:noRegion>74523 Schwäbisch Hall</wicri:noRegion></affiliation></author><author><name sortKey="Brabec, C J" uniqKey="Brabec C">C. J. Brabec</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstrasse 2a</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>91058 Erlangen</wicri:noRegion><wicri:noRegion>Haberstrasse 2a</wicri:noRegion><wicri:noRegion>91058 Erlangen</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials for Electronics and Energy (i-MEET), Friedrich Alexander University Erlangen-Nuremberg, Martensstrasse 7</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>91058 Erlangen</wicri:noRegion><wicri:noRegion>Martensstrasse 7</wicri:noRegion><wicri:noRegion>91058 Erlangen</wicri:noRegion></affiliation></author><author><name sortKey="Buerhop Lutz, C" uniqKey="Buerhop Lutz C">C. Buerhop-Lutz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstrasse 2a</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>91058 Erlangen</wicri:noRegion><wicri:noRegion>Haberstrasse 2a</wicri:noRegion><wicri:noRegion>91058 Erlangen</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0084000</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0084000 INIST</idno><idno type="RBID">Pascal:14-0084000</idno><idno type="wicri:Area/Main/Corpus">000101</idno><idno type="wicri:Area/Main/Repository">000015</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cellular circuit</term><term>Copper selenides</term><term>Electrical characteristic</term><term>Gallium selenides</term><term>Heterogeneity</term><term>High efficiency</term><term>Indium selenides</term><term>Interconnection</term><term>Manufacturing process</term><term>Masking</term><term>Open circuit</term><term>Open circuit voltage</term><term>Photovoltaic array</term><term>Sensitivity</term><term>Solar cell</term><term>Thermal imaging</term><term>Thermography</term><term>Thin film</term><term>Thin film cell</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Circuit cellulaire</term><term>Tension circuit ouvert</term><term>Panneau solaire</term><term>Thermographie</term><term>Imagerie thermique</term><term>Rendement élevé</term><term>Interconnexion</term><term>Sensibilité</term><term>Hétérogénéité</term><term>Procédé fabrication</term><term>Caractéristique électrique</term><term>Cellule couche mince</term><term>Cellule solaire</term><term>Masquage</term><term>Circuit ouvert</term><term>Séléniure d'indium</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Couche mince</term><term>CuInGaSe2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuInGaSe<sub>2</sub> (CIGS) thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. This occurs due to film's sensitivity to inhomogeneities during the manufacturing process. The result is a decrease of electrical power output from a cell or module. In this paper, we present the influence of macroscopic defects on the electrical behavior of CIGS thin film solar cells. To accomplish this, we investigated the relation between the IR-signal emitted of a defect in a cell (measured using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (V<sub>oc,cell</sub>) under low light conditions ( < 100 W/m<sup>2</sup>). Furthermore, we developed a modified masking method of measuring V<sub>oc,cell</sub> of a single cell within a thin film solar module.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>123</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>The influence of defects on the cellular open circuit voltage in CuInGaSe<sub>2</sub> thin film solar modules-An illuminated lock-in thermography study</s1></fA08><fA11 i1="01" i2="1"><s1>ADAMS (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>VETTER (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>HOGA (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>FECHER (F.)</s1></fA11><fA11 i1="05" i2="1"><s1>THEISEN (J. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>BRABEC (C. J.)</s1></fA11><fA11 i1="07" i2="1"><s1>BUERHOP-LUTZ (C.)</s1></fA11><fA14 i1="01"><s1>Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstrasse 2a</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Manz CIGS Technology GmbH, Alfred-Leikam-Str. 25</s1><s2>74523 Schwäbisch Hall</s2><s3>DEU</s3><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Materials for Electronics and Energy (i-MEET), Friedrich Alexander University Erlangen-Nuremberg, Martensstrasse 7</s1><s2>91058 Erlangen</s2><s3>DEU</s3><sZ>6 aut.</sZ></fA14><fA20><s1>159-165</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000506140400200</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0084000</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>CuInGaSe<sub>2</sub> (CIGS) thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. This occurs due to film's sensitivity to inhomogeneities during the manufacturing process. The result is a decrease of electrical power output from a cell or module. In this paper, we present the influence of macroscopic defects on the electrical behavior of CIGS thin film solar cells. To accomplish this, we investigated the relation between the IR-signal emitted of a defect in a cell (measured using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (V<sub>oc,cell</sub>) under low light conditions ( < 100 W/m<sup>2</sup>). Furthermore, we developed a modified masking method of measuring V<sub>oc,cell</sub> of a single cell within a thin film solar module.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Circuit cellulaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Cellular circuit</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Circuito celular</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Tension circuit ouvert</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Open circuit voltage</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Panneau solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Photovoltaic array</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Panel solar</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Thermographie</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Thermography</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Termografía</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Imagerie thermique</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Thermal imaging</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Imageria termica</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Rendement élevé</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>High efficiency</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Rendimiento elevado</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Interconnexion</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Interconnection</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Interconexión</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Sensibilité</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Sensitivity</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Sensibilidad</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Hétérogénéité</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Heterogeneity</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Heterogeneidad</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Procédé fabrication</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Manufacturing process</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Procedimiento fabricación</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Cellule couche mince</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Thin film cell</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Célula capa delgada</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Solar cell</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Célula solar</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Masquage</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Masking</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Enmascaramiento</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Circuit ouvert</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Open circuit</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Circuito abierto</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Couche mince</s0><s5>25</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Thin film</s0><s5>25</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Capa fina</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>CuInGaSe2</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>111</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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